| PART |
Description |
Maker |
| IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
| IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
| IRFI640G |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=9.8A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.18ohm，身份证\u003d 9.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF9620S IRF9620STRL IRF9620STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V Rds(on)=1.5ohm Id=-3.5A)
Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.5A)
Power MOSFET(Vdss=-200V/ Rds(on)=1.5ohm/ Id=-3.5A)
|
IRF[International Rectifier]
|
| IRC630 IRC |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
| IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
|
IRF[International Rectifier]
|
| MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors
CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014
CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola)
飞思卡尔半导体(中国)有限公司
|
| IRFU210 IRFR210 IRFU210PBF IRFR210TRL IRFR210TRR |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package
200V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)
|
IRF[International Rectifier]
|
| IRFP240 IRFP250NPBF IRFP240PBF |
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=20A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）\u003d 0.18ohm，身份证\u003d 20A条）
HEXFET? Power MOSFET
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF610-613 IRF613 IRF611 IRF612 MPT2N18 MPT2N20 IR |
SPST, 150mA PC Mount Pushbutton N沟道功率MOSFET.5A的，15000
N-Channel Power MOSFETs, 3.5A, 150-200V N沟道功率MOSFET.5A的，15000
N-Channel Power MOSFETs/ 3.5A/ 150-200V
N-Channel Power MOSFETs 3.5A 150-200V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFM220B IRFM220BTFFP001 IRFM220BD84Z |
1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFM220A
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
